mosfet leakage current equation

IEEE Xplore - A general partition scheme for gate leakage current.

mosfet leakage current equation

MOSFET: When can we not assume that the gate current is 0.

IEEE Xplore - Gate leakage current simulation by Boltzmann.

We present the analysis of direct tunneling (DT) gate leakage current in a 25 nm . Boltzmann equation , Computational modeling , Leakage current , MOSFETs.
The gate leakage current was calculated accurately using the three-terminal. MOSFET , Poisson equation , Schrodinger equation , ab initio calculations.
Gate leakage current is becoming an important component of total leakage current in scaled metal oxide semiconductor field effect transistor (MOSFET) devices.
Electrodes , Energy states , Green's function methods , Image analysis , Leakage current , MOSFET circuits , Optical scattering , Poisson equations , Quantum.
Images for mosfet leakage current equation.

mosfet leakage current equation

Mosfet Modeling for Circuit Analysis And Design - Google Books Result.
IEEE Xplore - Two-dimensional quantum mechanical simulation of.
IEEE Xplore - Modeling and numerical simulation of gate leakage.

IEEE Xplore - Gate leakage current in double-gate MOSFETs with Si.

The gate leakage current is investigated for nanoscale double-gate MOSFET with . The gate leakage current can be obtained with either the Landauer equation.
MOSFET , compact models , current continuity equation , gate leakage current , inversion charge , model parameter extraction methodology , source/drain.
Gate leakage current simulation by Boltzmann transport equation and its. so thin that MOSFET gate leakage current and oxide degradation are becoming.
High leakage current in deep-submicrometer regimes is be- coming a significant .. n-channel MOSFET biased in the weak inversion region. Let us consider that the source .. can be considered in the threshold voltage equation [20]. (6) where.
The influence of strain on the gate leakage current has been investigated analytically in. MOSFETs for a range of gate voltages and the gate insulator thicknesses.. the Poisson's equation using both the analytical and numerical approaches.
2D Quantum Mechanical Simulation of Gate-Leakage Current - IEEE.
We present the analysis of direct tunneling (DT) gate leakage current in a 25 nm . Boltzmann equation , Computational modeling , Leakage current , MOSFETs.
The gate leakage current was calculated accurately using the three-terminal. MOSFET , Poisson equation , Schrodinger equation , ab initio calculations.